Quantum theory of infrared detectors based on intrasubband transitions in III–V quantum wells

One of the perceived drawbacks of multiquantum well (QW) infrared detectors based on intrasubband conduction band transitions in III–V materials (e.g., GaAs/AlxGa1−xAs) is that photons at normal incidence to the multiquantum well interfaces will either not be absorbed or, at best, will be absorbed very weakly. The present article reviews briefly certain key aspects of the experimental evidence and theoretical arguments that both support and challenge this view, prior to developing a completely different approach to the problem. It is shown that the questions at issue relate to basic concepts of quantum mechanics. On this basis it is argued that in QW structures of appropriate design normal incidence absorption should occur, thus enabling, in principle, two-dimensional infrared detector imaging arrays to be fabricated in a simple manner.