We present experimental and theoretical evidence for impurity-assisted off-diagonal (i.e., Δn>0 transitions between conduction- and valence-band Landau levels (n=0,1,) for magnetoluminescence in modulation-doped degenerate semiconductor quantum wells. This new selection rule is employed to determine simultaneously the optical effective masses of the electrons and in-plane light holes in n-type strained GaAs/InGaAs/AlGaAs quantum wells.
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Lyo et al. (1988) studied this question.
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