Electron–optical-phonon interactions in ultrathin GaAs/AlAs multiple quantum wells

Nonequilibrium populations of both confined and interface phonons generated by picosecond laser pulses in a series of GaAs/AlAs quantum wells have been studied by time-resolved picosecond Raman scattering as a function of well width. The dependence of the nonequilibrium phonon populations on well width is found to be sensitive to the theoretical model which is used to describe the electron-phonon interaction. Our data disagree with the macroscopic model of electron-phonon interaction, but they are in excellent agreement with the microscopic model proposed recently by Huang and Zhu.