Electron transfer between adjacent channels simulated by ensemble Monte Carlo methods

The transfer of electrons between two channels, which are viewed as constituents of a ‘‘generic device’’ is studied. A many-particle Monte Carlo model with self-consistent electric fields is used for this analysis. The study has been performed to assess switching speeds associated with various novel devices, such as velocity modulation transistors and dual-channel high-electron mobility transistors. Typical switching time constants for a 1-μm device (0.4-μm gate length) are 3.5 ps for the longitudinal (source-to-drain) switch on, and 0.2 ps for the transport perpendicular to the interfaces between the two channels.