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The lattice infrared absorption and/or Raman spectrum peaks for ZnSe, InP, and GaSb semiconductor compounds having zincblende‐type structure are assigned to calculated critical point phonon frequencies at Γ, X, L, and W critical points. The assignments are consistent with Birman's selection rule and support lattice dynamical results. The reliability of the calculated critical point phonons for these compounds is checked by Brout's sum rule and compressibility and also comparing them with neutron or Raman data.
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Ram et al. (1989) studied this question.
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