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A laser beam irradiating a semiconductor in its transparency region induces a splitting of the exciton line through the dependence of the optical Stark effect on the different transition matrix elements. The splitting is observed in bulk and multiple-quantum-well GaAs, by femtosecond time-resolved spectroscopy for various polarization configurations. Experimental results are in good agreement with theory.
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Joffre et al. (1989) studied this question.
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