We fabricate the Ni/Lu2O3/TaN metal-insulator-metal capacitor with a high capacitance density of 7.5 fF/μm2, a relatively small quadratic voltage coefficient of capacitance (VCC) of 75 ppm/V2, a low leakage current of 5 × 10-8A/cm2at -1 V, and an excellent ten-year reliability with a very low ΔC/Cof 0.51% at 3 V. These small VCC value and good reliability are attributed to a reduction of carrier injection and trapping into the dielectric.
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Mondal et al. (2011) studied this question.
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