Nonstoichiometric germanium nitride. A new insulating material for MIS microelectronics. I. The choice of the insulator and deposition

A qualitative model of the electronic interaction at the insulator–semiconductor interface is proposed. On the basis of this model a sequence of electron-donor ability of the oxygen and nitrogen atoms in oxides and nitrides of the silicon subgroup is established which makes it possible to choose an insulator for a high-quality IS interface. A low-temperature method of obtaining thin films of nonstoichiometric germanium oxynitrides is described based on reactive sputtering of germanium in hydrazine plasma preceded by a low-temperature in situ etching of a semiconductor surface.