Current-voltage characteristics of Si Schottky barrier diodes are measured at various temperatures between 300 K and 420 K in order to investigate an applicability of a newly proposed interfacial layer model for Schottky barrier. Experimental data are analyzed on a basis of this model. Analyzed results are mostly found to be similar to those of a-Si:H and can be interpreted by the present model. The new interfacial layer model is then concluded to well represent actual Schottky barriers for both amorphous and crystalline semiconductors.
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Hideaki Ikoma Maeda (1991) studied this question.
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