Evaluation of the interface state energy distribution from Schottky I-V characteristics

The effect of the presence of an interfacial layer and interface states on the I-V characteristics of Schottky contacts is analyzed. A simple evaluation of the interface state energy distribution and the interfacial layer thickness to its relative dielectric constant ratio (relative interfacial layer thickness) is presented for two different models concerning the quasi-Fermi level position in Schottky contacts. The first experimental results evaluated from the I-V characteristics of n-type (100) GaAs-Cr/Au mesa Schottky contacts, are in agreement with those published earlier.