Al/Si(p) and Al/Si(n) Schottky diodes were implanted with hydrogen ions such that the peak of the hydrogen distribution was localized at the metal-semiconductor interface. Current-voltage (I-V) measurements indicated more ohmic behavior in the Al/Si(n) and more rectifying behavior in the Al/Si(p) diodes. For both cases, annealing at 200 °C for 30 min caused the I-V curves to almost revert to the pre-implantation characteristics. A similar behavior was observed using the capacitance-voltage (C-V) measurement technique. No significant change of the hydrogen concentration or redistribution of the concentration was observed after the 200 °C heat treatment. Correlation between the hydrogen depth profiling data and the electrical measurements indicated that, as far as I-V and C-V were concerned, the implanted hydrogens were electrically inactive.
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Yapsir et al. (1987) studied this question.
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