Thermodynamic and kinetic characteristics of GaAs film decomposition, mechanisms of film formation and growth, main features of the film growth under epitaxy in chemical transport were considered. The stages of epitaxial film growth and the relief smoothing of film surface were discussed applying data of electron microscopy investigations and theoretical considerations. The period of continuous film formation and degrees of the surface covering of the film growth by adsorbed substance were estimated.
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Александров et al. (1976) studied this question.
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