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June 1, 1993IEEE Photonics Technology Letters

High-frequency performance of separate absorption grading, charge, and multiplication InP/InGaAs avalanche photodiodes

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Authors

LTL.E. TarofSdPhotonics (United States)JYJ. YuIMECRBRobert A. BruceUniversity of Iowa

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Tarof et al. (1993) studied this question.

synapsesocial.com/papers/6a911bbe8b76b10fb073ded3https://doi.org/10.1109/68.219706
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  1. 1Planar InP-InGaAs avalanche photodetectors with n-multiplication layer exhibiting a very high gain-bandwidth product1990 · 37 citations
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  4. 4Excess noise design of InP/GaInAsP/GaInAs avalanche photodiodes1986 · 40 citations
  5. 5Planar InP/InGaAs avalanche photodetector with gain-bandwidth product in excess of 100 GHz1991 · 29 citations