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We have developed planar InGaAs/InP avalanche photodiodes based on trichloride YPE material. Gain-bandwidth-products greater than 70 GHz and bandwidths above 5 GHz at a gain of 10 make these devices attractive for high frequency digital and analog communication. This paper discusses the effects that limit the bandwidth of heterostructure APDs and the design, fabrication, measurement and performance of our devices.
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Hollenhorst et al. (1989) studied this question.
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