Direct observation of bombarding 5–15-keV Ga+ ion condensation on a Si target is achieved using a scanning ion microscope with a liquid-Ga ion source. The liquidlike pieces of condensed Ga move about easily to join or split. Condensation takes place beyond a critical ion dose, which is roughly explained by an implanted-ion build-up model.
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Ishitani et al. (1981) studied this question.