Computer Simulation and Measurement of Capacitance-Voltage Characteristics in Quantum Wire Devices of Trench-Oxide MOS Structure

We have proposed the trench-oxide metal-oxide-semiconductor (MOS) structure as a novel quantum wire device. In this paper we present results of computer simulation based on a self-consistent system and calculated quantized electron distribution and capacitance-voltage (C-V) characteristics. We have also fabricated the quantum wire MOS structure using electron beam lithography and electron cyclotron resonance reactive ion etching method and carried out measurements of C-V characteristics at 0.55 K. Possible evidence of one-dimensional quantum effect is obtained for the first time from C-V measurements using the 28 nm-wide trench-oxide structure.