InGaAs-InP charge-compensated unitraveling-carrier photodiodes with thick depletion region are demonstrated. A 40-mum-diameter photodiode achieved 10-GHz bandwidth and 24.5dBm RF output power. A 100-mum-diameter photodiode achieved bandwidth of 2 GHz and 29 dBm RF output power. Simulation of the temperature distribution in devices is also presented
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Duan et al. (2006) studied this question.
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