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Charge compensation is utilized in an InGaAs-InP uni-traveling-carrier photodiode to mitigate the space-charge effect. A 20-μm-diameter photodiode achieved a bandwidth of 25 GHz and large-signal 1-dB compression current greater than 90 mA; the output power at 20 GHz was 20 dBm. A smaller /spl sim/100-μm2photodiode exhibited a bandwidth of 50 GHz and large-signal 1-dB compression current greater than 50 mA. The maximum RF output power at 40 GHz was 17 dBm.
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Li et al. (2004) studied this question.
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