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March 1, 1998IEEE Photonics Technology Letters

InP-InGaAs uni-traveling-carrier photodiode with improved 3-dB bandwidth of over 150 GHz

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Authors

NSNobutaka ShimizuNippon Steel (Japan)NWNoboru WatanabeTohoku UniversityTFTadaomi FurutaTokyo Institute of Technology

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Shimizu et al. (1998) studied this question.

synapsesocial.com/papers/6a8cf00a551dbf60cd71bb45https://doi.org/10.1109/68.661427
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