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A new photodiode design that combines depleted and neutral absorption layers to minimise carrier travelling delay time for a given total absorption layer thickness is proposed. The fabricated photodiode has a thick (0.8 µm) InGaAs absorption layer and achieves a responsivity of 0.98 A/W at λ=1.55 µm while still maintaining a high bandwidth of 50 GHz.
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Muramoto et al. (2003) studied this question.
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