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A study into the RF output power limit for an InP/InGaAs uni-travelling-carrier photodiode (UTC-PD) is presented. The measured 1 dB compression power of a UTC-PD at 40 GHz was found to be as high as 9 dBm. From the bias voltage dependence of the saturation power, it was found that the space charge effect in the collector layer is mainly responsible for the RF saturation.
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Shimizu et al. (2000) studied this question.
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