InP/InGaAs Heterostructure Bipolar Transistors Grown at Low Temperature by Metalorganic Chemical Vapor Deposition

We describe the performance of InP/InGaAs heterostructure bipolar transistors (HBTs) grown at low temperature by metalorganic chemical vapor deposition (MOCVD). HBTs with a base thickness of 70 nm and doping level of 1×1019 cm-3 show excellent current gain characteristics (current gains h FE>300, ideality factors n B<1.25) at growth temperatures ranging from 500 to 575°C. In addition, Zn out-diffusion from the base layers into the undoped spacer layers is well suppressed to as low as 5×1017 cm-3.