High performance InP/InGaAs heterostructure bipolar transistors grown by metalorganic vapor phase epitaxy

We demonstrate high performance InGaAs/InP heterostructure bipolar transistors grown by metalorganic vapor phase epitaxy. A unity current gain cutoff frequency fT=78 GHz and a maximum oscillation frequency fmax=42 GHz are achieved in transistors with emitter size 2.5×11 μm2. Ring oscillators using nonthreshold logic show a propagation delay of 31 ps.