Effect of LaNiO3 Electrode on Electrical Properties of RF-Magnetron-Sputtered Pb(Zr,Ti)O3 Ferroelectric Thin Films

Thin films of Pb(Zr,Ti)O3 (PZT) were rf-magnetron sputtered on both (100)-textured LaNiO3 electrode and Pt electrode. In the presence of the (100)-textured LaNiO3 electrode, a pure perovskite phase of (100) preferred orientation could be obtained at substrate temperatures as low as 450°C. In contrast, the residual pyrochlore phase was present in films deposited on the Pt electrode. In addition to lowering the fabricating temperature, the LaNiO3 electrode increases the relative dielectric constant and markedly decreases the coercive field of PZT films. Most beneficially, the LaNiO3 electrode not only improves the fatigue resistance but also reduces the leakage current of PZT films.