The total emitter to collector delay for a Pnp AlGaAs/GaAs HBT has been reduced to 4.8 ps by employing a thin base (325 /spl Aring/) and collector (2300 /spl Aring/). Simultaneously, a low base sheet resistance of 170 ohms/square was achieved with tellurium doping. A higher collector doping than is typically used permitted operation at collector current densities in excess of 5×104A/cm2. A single emitter (2×4 μm2) and a single base contact device topology has an fTand fmaxof 33 and 66 GHz, respectively.
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Slater et al. (1994) studied this question.
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