The microwave performance of a pnp AlGaAs/GaAs heterojunction bipolar transistor was demonstrated for the first time. Common emitter current gains of 60 were obtained using MOCVD grown structures with 100 nm thick base layers and self-aligned emitter-base contacts. ft and fmax values were 12 and 20 GHz respectively. Under common-base configuration, 8 dB gain was obtained at 10 GHz. Device performance was characterised under CW and pulsed conditions.
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Bayraktaroglu et al. (1988) studied this question.
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