Strontium titanate thin films by rapid thermal processing

SrTiO3 thin films having perovskite structure were fabricated by sol-gel technique with a post-deposition rapid thermal annealing treatment at 550 °C for 60 s. The films exhibited good structural, dielectric, and insulating properties. The measured dielectric constant and loss factor at 100 kHz were 225 and 0.008, respectively. Unit area capacitance of 3.5 fF/μm2 and leakage current density of less than 10−8 A/cm2 were obtained for 500–800 nm thick films. A charge storage density of 18.3 fC/μm2 was obtained at an applied electric field of 100 kV/cm. The resistivity of these films was in the range of 1010–1013 Ω cm. The C-V measurements on films in metal-insulator-semiconductor (MIS) configuration indicated good Si/SrTiO3 interface characteristics.