Improved gain was observed at low currents when a thin emitter ledge was incorporated into npn In0.52Al0.48As/In0.53Ga0.47As heterojunction bipolar transistors. A 40-nm-thick n-In0.52Al0.48As emitter ledge resulted in over four times higher gain at low biases due to reduced surface recombination.
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Kyono et al. (1994) studied this question.
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