Answers are grounded in this paper and cite their sources.
New AuGe/Ni/Ti/Au multi-layer structure ohmic contact to n-GaAs is reported which is suitable to fabricate fine emitter and collector patterns of AlGaAs/GaAs heterojunction bipolar transistors. According to an Auger electron spectroscopy investigation, a new alloying mechanism takes place in reducing contact resistivity. A contact resistivity of 3×10-7Ω·cm2 for 3×1018cm-3 doped n-GaAs was achieved through optimum alloying at 370°C.
No takes yet. Share an insight, caveat, or question.
Itô et al. (1984) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: