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Desorption behaviors of arsenic on GaAs and phosphorus on GaP surfaces have been studied by the specular-beam intensity change of reflection high-energy electron diffraction when the group-V cracker shutter is closed in gas-source molecular beam epitaxy. We obtained an activation energy of 58 kcal/mol for arsenic desorption from GaAs. Compared with arsenic on GaAs, phosphorus on GaP has a large desorption rate constant, and the activation energy of phosphorus desorption is 43 kcal/mol. These activation energies are comparable to the heats of vaporation of As2 and P2.
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Liang et al. (1992) studied this question.
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