We present a Raman scattering study of a 10-layer-thick Si film grown epitaxially on GaAs (001) and covered by GaAs. The downshift of the optical phonon mode of Si is described in terms of the planar biaxially tensile strains in the Si thin layer. The broadening to the lower-energy side is explained by the confinement effect. The layer is grown pseudomorphic on GaAs with partial lattice relaxation.
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Tanino et al. (1991) studied this question.
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