Answers are grounded in this paper and cite their sources.
The characteristics of carbon-doped GaInP/GaAs heterojunction bipolar transistors (HBTs) with a compositionally-graded base are reported. The characteristics of HBTs with three different linearly-graded AlxGa1-xAs bases (x = 0 → 0.1, 0 → 0.2, 0 → 0.3) are compared with those of an HBT without base grading. Nearly ideal transistor characteristics were observed for x values up to 0.2, indicating possible high-speed operation of graded base GaInP/GaAs HBTs.
No takes yet. Share an insight, caveat, or question.
Song et al. (1994) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: