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The characteristics of InGaP/GaAs:C double-heterojunction bipolar transistors (DHBTs) with different collector layer designs are investigated and compared with those of a single heterojunction bipolar transistor. By inserting highly-doped n-type GaAs and InGaP layers in the collector, current saturation characteristics of a DHBT, comparable to those of a single heterojunction bipolar transistor, are achieved. The breakdown voltage of the DHBT was substantially higher than that of a single-heterojunction bipolar transistor with the same collector doping and thickness.
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Song et al. (1993) studied this question.
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