Fabrication of GaAs-Mo-Si structures by metalorganic chemical vapor deposition and laser annealing

Undoped-polycrystalline GaAs layers were deposited on Mo layers by metalorganic chemical vapor deposition and annealed by pulse laser irradiation. The laser used here was a Q-switched ruby laser and the annealing was done by immersing the samples in SnCl2-dissolved methanol. Then, recrystallization and doping of the GaAs layers were successfully done. The Schottky characteristics were observed between the top GaAs layer and the Mo layer underneath; the barrier height was 0.53 eV.