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Careful control of UHV conditions during molecular beam epitaxial growth of thin crystalline gallium arsenide layers has to be accomplished to avoid undesired incorporation of chemical defects. Residual acceptor impurities in the MBE films were detected through their characteristic photoluminescence spectra, and the effect of these compensating acceptor centers on electron mobility in n‐type MBE was analyzed. A useful procedure for an accurate determination of the residual acceptor concentration in MBE is presented.
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Koschel et al. (1981) studied this question.
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