A Wideband Inductorless Single-to-Differential LNA in 0.18 μ m CMOS Technology for Digital TV Receivers

This study presents an inverter-based inductorless single-to-differential (S2D) wideband low-noise amplifier (LNA). The proposed LNA has three inverter-based gain stages with a global shunt feedback resistor for wideband input impedance matching. Moreover, a shunt capacitor with a current bias transistor in the third gain stage enhances the gain/phase imbalances and the linearity of the pseudo-differential outputs. When implemented in a TSMC$0.18$-μ mCMOS process, this wideband LNA covering DC-1.4 GHz achieves aS₂₁of 16.4 dB, a minimal input third-order intercept point (IIP3) of-13.3~ dBm, and a minimal noise figure (with output buffers) of 3 dB. The output gain and phase imbalances are less than 1 dB and 2.5∘, respectively, within 1 GHz. The chip consumes 12.8 mW from a 1.8 V supply.