Answers are grounded in this paper and cite their sources.
Measurement of the differential capacity of the interface between germanium (100) and , phosphate buffered to p H 7.4, yields data indicating that only the capacity of the semiconductor space charge region is observed. Analysis of the data yields the simple relationship for distribution of potential where is a constant for a given condition at the interface. Surface recombination velocity is found to be close to zero. This, coupled with the absence of capacity additional to the space charge region, indicates the absence of fast surface states under these conditions. Measurement of the surface conductivity of germanium as a function of surface potential does not agree with theory but is reproducible.
No takes yet. Share an insight, caveat, or question.
Brattain et al. (1962) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: