A new CMOS switched capacitor is developed to be used for high-power applications such as a power amplifier, where high voltage handling capability and low distortion are two major factors. In order to demonstrate superior performance of the proposed structure over a conventional structure, two designs are analyzed and compared while maintaining comparable small signal characteristics such as a 2:1 tuning ratio and a quality factor. The maximum applicable voltage swing of the proposed structure is improved over the conventional structure by a factor of VDD/ Vth, or 12 dB in this design. The proposed structure also shows a greatly improved two-tone third-order inter-modulation distortion characteristic with a maximum 34 dB improvement. This proposed structure is a suitable component for tunable CMOS power amplifier applications.
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Yoon et al. (2010) studied this question.
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