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An edge-emitting monolithically integrated master oscillator power amplifier (M-MOPA) has been fabricated by integrating a distributed Bragg reflector laser with a 500μm long singlemode amplifier. The M-MOPA contains a strained InGaAs quantum well in the active region and operates at ∼981.5nm in an edge-emitting fashion with maximum powers in excess of 175mW. Single longitudinal and transverse mode operation is maintained to powers in excess of 110mWCW.
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O’Brien et al. (1992) studied this question.
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