Q-switched laser irradiation has been used to anneal O+-implanted silicon to form SiO2 layers. Results of differential Fourier-transformed infrared spectroscopy and transmission electron microscopy confirm the formation of oxide layers. Segregation of oxygen toward the surface was observed by secondary ion mass spectroscopy and correlated with resolidification velocities, which vary as a function of laser energy densities.
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Chiang et al. (1981) studied this question.
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