Presents a detailed calculation using the method of finite differences to study the dynamics of pulsed CO 2 laser annealing of ion-implanted Si. The calculations are based on a thermal melting model, taking into account the temperature dependences of all pertinent material parameters, including the absorption coefficient. The authors investigate the 'thermal runaway' behaviour and calculate the threshold power density to cause thermal runaway and surface melting of Si during CO 2 laser annealing.
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Bhattacharyya et al. (1981) studied this question.
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