Effects of Frequency and Temperature on Optimum Dimensions of a Quantum Well Solar Cell (AlGaAs/GaAs)

In this work, we studied the effect of frequency and temperature on the optimal dimensions of a quantum well photodiode made of an alloy of materials (AlGaAs/GaAs). In fact, the derivative of the photocurrent density with respect to the recombination velocity at the junction (Sf) gives a quadratic equation whose solutions are expressions of the recombination velocities (Se1 and Se2) at the front surface. Thus, by analyzing the mathematical expressions describing the recombination rates of charge carriers in the solar cell, the graphical representation of these relationships based on different parameters, such as operating frequency and temperature, allows the optimal thickness to be precisely determined, maximizing energy conversion efficiency while minimizing recombination losses. Finally, analysis of these curves made it possible to establish calibration relationships for the optimal thickness, thus providing a reliable prediction of the solar cell's behavior and the material's efficiency. The calibration curves obtained provide a solid basis for studying system performance, optimizing manufacturing processes and adjusting production parameters. This approach improves the efficiency of quantum well solar cells through precise characterization, with the aim of maximizing their energy yield.