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Relatively good GaAs solar cells can be made from poor-quality substrates by making the junction deep (≳1 μ) instead of shallow and by ’’leaching’’ both the pGaAs and nGaAs regions during the growth process. AM0 efficiencies of 14.7% (19% AM1) have been obtained from substrates with starting substrate diffusion lengths of 0.6 μ.
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Hovel et al. (1975) studied this question.
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