High-power 0.98-/spl mu/m strained quantum-well lasers fabricated using in situ monitored reactive ion beam etching

0.98-μm wavelength InGaAs-AlGaAs strained quantum-well buried ridge lasers were fabricated using in situ monitored reactive ion beam etching (RIBE). This technique allowed a very accurate ridge geometry, resulting in high single transverse-mode power more than 250 mW and high-fiber coupled power more than 150 mW.