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November 9, 1989Electronics Letters

High-power 0.98μm GaInAs strained quantum well lasers for Er 3+ -doped fibre amplifier

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Authors

MOM. OkayasuOclaro (Japan)TTTakaharu TakeshitaNagoya Institute of TechnologyMYMakoto YamadaOkinawa Institute of Science and Technology Graduate University

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Okayasu et al. (1989) studied this question.

synapsesocial.com/papers/6a759586fbccc8f4fd160f15https://doi.org/10.1049/el:19891050
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Also Consider

Synapse has enriched 2 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Graded-index separate-confinement InGaAs/GaAs strained-layer quantum well laser grown by metalorganic chemical vapor deposition1986 · 105 citations
  2. 2Efficient pump wavelengths of erbium-doped fibre optical amplifier1989 · 120 citations