In a semi-insulating GaAs (S.I. GaAs) diode with an ohmic cathode, a negative differential resistance (NDR) appears at a field as low as 2 kV/cm. In the NDR region, luminescence with a broad spectrum is observed. The luminescence area is localized just in front of the anode. These results are explained on the basis of the avalanche injection effect in S.I. GaAs material. The electron temperature estimated from the luminescent spectrum is 3200 K. The avalanche multiplication is discussed in terms of the low-field avalanche scheme.
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Hirohata et al. (1993) studied this question.
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