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The recrystallization behavior of Ar+ implanted GaAs has been studied using transmission electron microscopy and Rutherford backscattering channeling and proton induced x-ray emission techniques. Ar+ implanted in undoped GaAs at 700 keV to a fluence of 5×1015 cm−2 has been used in the present investigation. Formation of microtwins are observed after annealing at 400 °C. These microtwins start to anneal at about 600 °C and disappear completely at about 850 °C at which point Ar bubbles are observed to form along with dislocations. Lattice location experiments show that the Ar atoms are randomly distributed in the lattice.
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Bhattacharya et al. (1983) studied this question.
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