The activation of magnesium implants in GaAs has been found to increase drastically with coimplantation of arsenic and to depend strongly on the As implantation parameters. p-type carrier concentrations as high as 4×1020 cm−3 have been achieved for 5×1015 cm−2, 190-keV Mg+/1×1016 cm−2, 540-keV As2+ implants. The role of the As has been shown to block the Mg diffusion during the silicon-nitride-capped 5-min anneals at 750 °C.
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Landgren et al. (1988) studied this question.
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