Implantation-induced diffusion of Zn and Be in GaAs/AlGaAs heterostructures

A combined Be/O implantation was performed into GaAs/Al0.3Ga0.7As heterostructures containing Zn and Se as intrinsic p and n dopants. Subsequent rapid thermal annealing resulted in an enhanced out-diffusion of Zn and a redistribution of Be, whereas the Se dopant profile remained essentially unchanged. Atomic profiles of Zn and Be could be correlated with the microscopic defect distribution. A change in the photoluminescence spectrum due to the overcompensation of the n-doped GaAs and AlGaAs layers was observed and corresponding signals associated with Be were identified. Annealing without a preceding implantation was shown to have no influence on the Zn atomic profile.