Observation of high mobility and cyclotron resonance in 20 Å silicon delta-doped GaAs grown by MBE at 480 °C

Observation of high mobility and cyclotron resonance in 20 Å silicon delta-doped GaAs grown by MBE at 480 °C, P M Koenraad, F A P Blom, C J G M Langerak, M R Leys, J A A J Perenboom, J Singleton, S J R M Spermon, W C van der Vleuten, A P J Voncken, J H Wolter